Atomic fluctuations in electronic materials revealed by dephasing
نویسندگان
چکیده
منابع مشابه
Localization and Dephasing Driven by Magnetic Fluctuations in Low Carrier Density Colossal Magnetoresistance Materials
Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the ”mobility edge”, which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the ”mobility edge” crosses the Fermi energy a large and sharp chang...
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ژورنال
عنوان ژورنال: Proceedings of the National Academy of Sciences
سال: 2020
ISSN: 0027-8424,1091-6490
DOI: 10.1073/pnas.1916792117